Title :
The investigation of the transient photovoltage in HgCdTe infrated photovoltaic detectors
Author :
Cui, Haoyang ; Tang, Naiyun ; Tang, Zhong
Author_Institution :
Sch. of Comput. & Inf. Eng., Shanghai Univ. of Electr. Power, Shanghai, China
Abstract :
The changed polarity of transient photovoltage (TPA) from negative to positive induced by ultra fast lasers illumination is studied in the HgCdTe p-n junction photovoltage detector. The negative photovoltaic-response decrease obviously and even disappear by blocking the laser beam with an aperture to limit the illumination area of the linear array detectors. A combined theoretical model of p-n junction and Schottky contact can explain this new phenomenon well. Using the TPA technique and the combined model, the characters of p-n junction and Schottky contact will be distinguished. Therefore, it could be used in characterizing the Ohmic contact of the detectors electrodes, and its sensitivity is expected to be much higher than the steady states methods.
Keywords :
II-VI semiconductors; Schottky barriers; cadmium compounds; infrared detectors; laser beams; mercury compounds; ohmic contacts; optical arrays; p-n junctions; photodetectors; semiconductor device models; HgCdTe; Ohmic contact; Schottky contact; TPA; detector electrodes; infrared photovoltaic detectors; laser beam blocking; linear array detectors; negative photovoltaic-response; p-n junction photovoltage detector; polarity; theoretical model; transient photovoltage; ultrafast laser illumination; Detectors; Electrodes; Laser excitation; Measurement by laser beam; P-n junctions; Schottky barriers; Transient analysis; HgCdTe; Schottky contact; polarity change; transient photovoltage;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316538
