Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

Author

Jeng, S.J. ; Ahlgren, D.C. ; Berg, G.D. ; Ebersman, B. ; Freeman, G. ; Greenberg, D.R. ; Malinowski, J. ; Nguyen-Ngoc, D. ; Schonenberg, K.T. ; Stein, K.J. ; Colavito, D. ; Longstreet, M. ; Ronsheim, P. ; Subbanna, S. ; Harame, D.L.

Author_Institution

IBM Corp., Hopewell Junction, NY, USA

fYear

1997

fDate

28-30 Sep 1997

Firstpage

187

Lastpage

190

Abstract

We have explored the process window for polysilicon resistor in the self-aligned epi-base HBT process utilizing various structure and implant conditions. We have performed a systematic study on the effects of implant energy, dosage, and polysilicon structure on the polysilicon resistor, p-i-n diode, and NPN performance. We find that the properties of this resistor can be controlled via the implant conditions, while leaving key HBT figures of merit such as f_T, f_max virtually unchanged. We also demonstrate conditions resulting in a precision, low TCR resistor

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; ion implantation; resistors; semiconductor materials; silicon; NPN HBT; Si; SiGe; TCR; extrinsic base process; figure of merit; integrated SiGe HBT; ion implantation; p-i-n diode; polysilicon resistor; process window; self-aligned epi-base HBT process; Boron; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Manufacturing; Microelectronic implants; P-i-n diodes; Resistors; Silicon germanium; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647432

Filename

647432