Title :
Device simulation of intermediate band solar cells
Author :
Yoshida, Katsuhisa ; Okada, Yoshitaka
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
Abstract :
The intermediate band (IB) solar cells is one of the candidates to realize a higher conversion efficiency than the Shockley-Queisser limit of single-junction solar cells. By using device simulation of intermediate solar cells developed based on drift-diffusion method, we studied the fundamental properties of IB cell. Light concentration technique is very important to reduce the recombination via IB.
Keywords :
solar cells; IB solar cells; Shockley-Queisser limit; device simulation; drift-diffusion method; intermediate band solar cells; light concentration technique; single-junction solar cells; Gallium arsenide; Photonic band gap; Photovoltaic cells; Propagation losses; Quantum dots; Radiative recombination; device simulation; intermediate band solar cell; light concentration;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1602-6
DOI :
10.1109/NUSOD.2012.6316541
