DocumentCode
3497925
Title
A novel inverse-magnetostrictive type pressure sensor with planar sensing inductor
Author
Chang, Hsie-Chia ; Liao, Shengcai ; Hsieh, Henry ; Lin, Shunjiang ; Lai, Ching-Ming ; Chen, Ru Shan ; Fang, Wanliang
Author_Institution
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2013
fDate
20-24 Jan. 2013
Firstpage
685
Lastpage
688
Abstract
In this study, a novel planar inductor to detect the pressure sensor is proposed. The planar inductor consists of planar coil and CoFeB films. The proposed sensor exploits the inverse-magnetostriction effect to change the permeability of the CoFeB film by pressure load. This permeability variation will further result in the inductance difference of the planar inductor. Consequently the relationship between the pressure and inductance can be obtained by the inductance measurement. To demonstrate the presented concept, prototype inverse-magnetostrictive type pressure sensors with planar sensing inductor (Al planar coil and CoFeB films) have been implemented and tested. Sensitivity measurements show the gauge factor of the novel pressure sensor is approximate 280. To support the proposed concept, the vibrating sample magnetometer (VSM) measurements show the magnetic anisotropy of the CoFeB film (extracted from the hysteresis loops) is changed due to the applied pressure load.
Keywords
aluminium; cobalt compounds; inductance measurement; inductors; iron compounds; magnetometers; magnetostrictive devices; permeability; pressure sensors; Al; CoFeB; aluminium planar coil; inductance measurement; inverse-magnetostrictive type pressure sensor; magnetic anisotropy; permeability variation; planar inductor; planar sensing inductor; pressure load; sensitivity measurement; vibrating sample magnetometer measurement; Coils; Inductance; Inductors; Magnetic films; Sensors; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location
Taipei
ISSN
1084-6999
Print_ISBN
978-1-4673-5654-1
Type
conf
DOI
10.1109/MEMSYS.2013.6474335
Filename
6474335
Link To Document