DocumentCode :
3497925
Title :
A novel inverse-magnetostrictive type pressure sensor with planar sensing inductor
Author :
Chang, Hsie-Chia ; Liao, Shengcai ; Hsieh, Henry ; Lin, Shunjiang ; Lai, Ching-Ming ; Chen, Ru Shan ; Fang, Wanliang
Author_Institution :
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
20-24 Jan. 2013
Firstpage :
685
Lastpage :
688
Abstract :
In this study, a novel planar inductor to detect the pressure sensor is proposed. The planar inductor consists of planar coil and CoFeB films. The proposed sensor exploits the inverse-magnetostriction effect to change the permeability of the CoFeB film by pressure load. This permeability variation will further result in the inductance difference of the planar inductor. Consequently the relationship between the pressure and inductance can be obtained by the inductance measurement. To demonstrate the presented concept, prototype inverse-magnetostrictive type pressure sensors with planar sensing inductor (Al planar coil and CoFeB films) have been implemented and tested. Sensitivity measurements show the gauge factor of the novel pressure sensor is approximate 280. To support the proposed concept, the vibrating sample magnetometer (VSM) measurements show the magnetic anisotropy of the CoFeB film (extracted from the hysteresis loops) is changed due to the applied pressure load.
Keywords :
aluminium; cobalt compounds; inductance measurement; inductors; iron compounds; magnetometers; magnetostrictive devices; permeability; pressure sensors; Al; CoFeB; aluminium planar coil; inductance measurement; inverse-magnetostrictive type pressure sensor; magnetic anisotropy; permeability variation; planar inductor; planar sensing inductor; pressure load; sensitivity measurement; vibrating sample magnetometer measurement; Coils; Inductance; Inductors; Magnetic films; Sensors; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
ISSN :
1084-6999
Print_ISBN :
978-1-4673-5654-1
Type :
conf
DOI :
10.1109/MEMSYS.2013.6474335
Filename :
6474335
Link To Document :
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