Title :
A SiGe HBT BiCMOS technology for mixed signal RF applications
Author :
Ahlgren, D.C. ; Freeman, G. ; Subbanna, S. ; Groves, R. ; Greenberg, D. ; Malinowski, John ; Nguyen-Ngoc, D. ; Jeng, S.J. ; Stein, K. ; Schonenberg, K. ; Kiesling, D. ; Martin, B. ; Wu, S. ; Harame, D.L. ; Meyerson, B.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
We present results of IBM´s Silicon Germanium HBT 0.35 μm Leff BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (ft, fmax). These results demonstrate the potential of designing analog/mixed signal applications with “system-on-a-chip” functionality
Keywords :
Ge-Si alloys; 0.35 micron; 200 mm; SiGe; SiGe HBT NPN BiCMOS technology; mixed signal RF circuit; system-on-a-chip; BiCMOS integrated circuits; CMOS technology; Capacitors; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; RF signals; Radio frequency; Resistors; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647434
