• DocumentCode
    3498001
  • Title

    A SiGe HBT BiCMOS technology for mixed signal RF applications

  • Author

    Ahlgren, D.C. ; Freeman, G. ; Subbanna, S. ; Groves, R. ; Greenberg, D. ; Malinowski, John ; Nguyen-Ngoc, D. ; Jeng, S.J. ; Stein, K. ; Schonenberg, K. ; Kiesling, D. ; Martin, B. ; Wu, S. ; Harame, D.L. ; Meyerson, B.

  • Author_Institution
    IBM Corp., Hopewell Junction, NY, USA
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    195
  • Lastpage
    197
  • Abstract
    We present results of IBM´s Silicon Germanium HBT 0.35 μm Leff BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (ft, fmax). These results demonstrate the potential of designing analog/mixed signal applications with “system-on-a-chip” functionality
  • Keywords
    Ge-Si alloys; 0.35 micron; 200 mm; SiGe; SiGe HBT NPN BiCMOS technology; mixed signal RF circuit; system-on-a-chip; BiCMOS integrated circuits; CMOS technology; Capacitors; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; RF signals; Radio frequency; Resistors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647434
  • Filename
    647434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3498001