DocumentCode :
3498002
Title :
Influence of polar surface properties on InGaN/GaN core-shell nanorod LED properties
Author :
Maur, M. Auf der ; Sacconi, F. ; Carlo, A. Di
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear :
2012
fDate :
28-31 Aug. 2012
Firstpage :
95
Lastpage :
96
Abstract :
InGaN/GaN nanorod core-shell LEDs have shown to be very promising candidates for high efficiency lighting devices. Such nanorods can be grown in different ways, leading to different device geometry and in particular to different structures near the polar Ga- and N-face nanorod surfaces. In this work the influence of the properties of the polar surfaces on the electrical device behaviour is studied qualitatively based on a semiclassical simulation model.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanorods; semiconductor device models; InGaN-GaN; LED; core-shell nanorod; polar surface properties; semiclassical simulation model; Anodes; Gallium nitride; Nanoscale devices; Passivation; Quantum well devices; Radiative recombination; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on
Conference_Location :
Shanghai
ISSN :
2158-3234
Print_ISBN :
978-1-4673-1602-6
Type :
conf
DOI :
10.1109/NUSOD.2012.6316556
Filename :
6316556
Link To Document :
بازگشت