An accurate ´decoupled C-V´ method for characterizing channel and overlap capacitances of miniaturized MOSFET

A novel ´decoupled C-V´ technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET´s. This method successfully decouples channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.