• DocumentCode
    3498040
  • Title

    Accumulation-type vs. inversion-type of an ultra-thin SIO PMOS device operating at 300 K and 77 K: subthreshold behavior and pull-up switching performance of a CMOS inverter

  • Author

    Kuo, J.B. ; Sim, J.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    1993
  • fDate
    1993
  • Firstpage
    247
  • Lastpage
    250
  • Abstract
    This paper presents two-dimensional simulation study on the accumulation-type vs. the inversion-type of an ultra-thin SOI PMOS device operating at 300 K and 77 K in terms of its subthreshold behavior and pull-up switching performance of a CMOS inverter, using low-temperature PISCES.
  • Keywords
    CMOS integrated circuits; SIMOX; insulated gate field effect transistors; logic gates; semiconductor device models; 300 K; 77 K; CMOS inverter; SIMOX process; Si-SiO2; accumulation type device; inversion type device; low-temperature PISCES; pull-up switching performance; semiconductor; subthreshold behavior; two-dimensional simulation; ultra-thin SOI PMOS device; CMOS process; Doping; Insulation; Inverters; MOS devices; Semiconductor films; Silicon; Temperature; Thin film devices; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
  • Conference_Location
    Taipei, Taiwan
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0978-2
  • Type

    conf

  • DOI
    10.1109/VTSA.1993.263596
  • Filename
    263596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3498040