Title :
Latch induced hot-carrier effects in fully-depleted and partially-depleted SIO/NMOSFET´s
Author :
Zhang, Binglong ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
Single-transistor-latch induced hot-carrier stress is found to cause charge trapping and interface-trap generation in both the gate oxide and the buried oxide in SOI/NMOSFET´s made on a range of top silicon thicknesses. The resulting degradation of the front-channel transistor characteristics depends strongly on the top silicon thickness. Self-consistent models are proposed to explain the results.
Keywords :
SIMOX; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device models; SIMOX wafer; Si-SiO2; charge trapping; fully depleted SOI NMOSFET; interface-trap generation; latch induced hot carrier stress; partially depleted SOI NMOSFET; self-consistent models; Degradation; Electron traps; Hot carrier effects; MOSFET circuits; Microelectronics; Semiconductor thin films; Silicon; Stress measurement; Thin film transistors; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263598
