Title :
Study of current drive in deep sub-micrometer SOI PMOSFET´S
Author :
Assaderaghi, Fariborz ; Hui, Kelvin ; Parke, Stephen ; Duster, Jon ; Ko, Ping K. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Sub-quarter micrometer PMOSFET´s are fabricated on SOI films, exhibiting excellent short channel behavior low source-drain resistance, and remarkably large current drive and transconductance. For Tox=5.5 nm, saturation transconductances of 270 mS/mm at 300 K and 350 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. Direct measurements and simulation results show that the improved current drive is due to low series resistance, forward bias body effect and the reduction of body charge effect.
Keywords :
SIMOX; insulated gate field effect transistors; 270 mS/mm; 300 K; 350 mS/mm; 5.5 nm; 80 K; PISCES simulation; SIMOX substrates; Si-SiO2; body charge effect; current drive; deep submicrometer SOI PMOSFET; forward bias body effect; saturation transconductances; series resistance; short channel behavior; source-drain resistance; Drives; Electric resistance; Immune system; Implants; Kelvin; MOSFET circuits; Semiconductor films; Silicon; Threshold voltage; Transconductance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263599
