• DocumentCode
    3498255
  • Title

    A single-polysilicon quasi self-aligned npn bipolar technology with 30 GHz fT and 40 GHz fmax

  • Author

    Ailloud, L. ; de Pontcharra, J. ; Vendrame, L. ; Behouche, E. ; Thomas, D. ; Blanchard, B. ; Gravier, T. ; Chantre, A.

  • Author_Institution
    CEA, Centre d´´Etudes Nucleaires de Grenoble, France
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    198
  • Lastpage
    201
  • Abstract
    A low cost high performance 0.5 μm single-poly quasi self-aligned npn bipolar technology is described. The devices feature record fT and fmax values of 30 GHz and 40 GHz respectively, with 4.2 V BVCEO well into the range of performances usually covered by double-poly bipolar transistors
  • Keywords
    bipolar transistors; elemental semiconductors; semiconductor technology; silicon; 0.5 micron; 30 GHz; 4.2 V; 40 GHz; Si; bipolar transistor; cut off frequency; maximum frequency of oscillation; single-polysilicon quasi self-aligned npn bipolar technology; Bipolar transistors; Boron; CMOS process; CMOS technology; Costs; Fabrication; Frequency; Implants; Silicides; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647435
  • Filename
    647435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3498255