Title :
A single-polysilicon quasi self-aligned npn bipolar technology with 30 GHz fT and 40 GHz fmax
Author :
Ailloud, L. ; de Pontcharra, J. ; Vendrame, L. ; Behouche, E. ; Thomas, D. ; Blanchard, B. ; Gravier, T. ; Chantre, A.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
A low cost high performance 0.5 μm single-poly quasi self-aligned npn bipolar technology is described. The devices feature record fT and fmax values of 30 GHz and 40 GHz respectively, with 4.2 V BVCEO well into the range of performances usually covered by double-poly bipolar transistors
Keywords :
bipolar transistors; elemental semiconductors; semiconductor technology; silicon; 0.5 micron; 30 GHz; 4.2 V; 40 GHz; Si; bipolar transistor; cut off frequency; maximum frequency of oscillation; single-polysilicon quasi self-aligned npn bipolar technology; Bipolar transistors; Boron; CMOS process; CMOS technology; Costs; Fabrication; Frequency; Implants; Silicides; Silicon carbide;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647435
