Title :
Analysis of Temperature Modulation on a SiGe Power Amplifier Non Linearity
Author :
Leyssenne, L. ; Pham, J.-M. ; Jarry, P. ; Kerhervé, E. ; Saias, Daniel
Author_Institution :
IXL Lab., CNRS UMR, Bordeaux
Abstract :
The following discussion presents the design and measurements of a power amplifier for a WCDMA handset application on silicon with a STM BiCMOS 0.25mum process. An analysis of the impact of temperature on linearity especially on adjacent channel power regrowth is proposed
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; power amplifiers; 0.25 micron; BiCMOS process technology; STM BiCMOS; SiGe; WCDMA handset application; power amplifier; temperature modulation; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Power amplifiers; Power measurement; Radiofrequency amplifiers; Silicon germanium; Temperature dependence; Thermal stability; BiCMOS process technology; RF power amplifier; SiGe simulation; physical thermal dependency;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311130
