DocumentCode
3498297
Title
Analysis of Temperature Modulation on a SiGe Power Amplifier Non Linearity
Author
Leyssenne, L. ; Pham, J.-M. ; Jarry, P. ; Kerhervé, E. ; Saias, Daniel
Author_Institution
IXL Lab., CNRS UMR, Bordeaux
fYear
2006
fDate
8-10 Oct. 2006
Firstpage
1
Lastpage
4
Abstract
The following discussion presents the design and measurements of a power amplifier for a WCDMA handset application on silicon with a STM BiCMOS 0.25mum process. An analysis of the impact of temperature on linearity especially on adjacent channel power regrowth is proposed
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; elemental semiconductors; power amplifiers; 0.25 micron; BiCMOS process technology; STM BiCMOS; SiGe; WCDMA handset application; power amplifier; temperature modulation; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Power amplifiers; Power measurement; Radiofrequency amplifiers; Silicon germanium; Temperature dependence; Thermal stability; BiCMOS process technology; RF power amplifier; SiGe simulation; physical thermal dependency;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location
Maastricht
ISSN
1088-9299
Print_ISBN
1-4244-0458-4
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2006.311130
Filename
4100198
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