DocumentCode :
3498311
Title :
Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements
Author :
Lo, Tommy C P ; Chan, Philip C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. Technol., Clear Water Bay, Hong Kong
fYear :
1996
fDate :
26-28 Nov 1996
Firstpage :
252
Lastpage :
255
Abstract :
Silicon piezoresistive stress sensors can be used for in situ stress measurements during fabrication and encapsulation of the silicon die. These sensors are fabricated in the silicon die using the conventional silicon processing steps. In this paper we describe a stress sensor or a 3-D micro-stain gauge for such applications. We shall describe the design and fabrication of the test chip, experimental results as well as the detailed calibration procedures using a four-point bending (4PB) fixture. The resistance of stress sensors was found to vary linearly to the applied stress. The piezoresistive coefficient was calculated and found to agree with the reported values for silicon. The problems associated with the calibration process was also discussed
Keywords :
calibration; integrated circuit measurement; piezoresistive devices; strain gauges; stress measurement; 3D micro-strain gauge; Si; calibration; design; encapsulation; fabrication; four-point bending; in situ on chip stress measurement; silicon die processing; silicon piezoresistive stress sensor; Calibration; Electrical resistance measurement; Fabrication; Fixtures; Piezoresistance; Resistors; Semiconductor device measurement; Silicon; Stress measurement; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
Type :
conf
DOI :
10.1109/SMELEC.1996.616492
Filename :
616492
Link To Document :
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