Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies

Author

de Graauw, A.J.M. ; van Bezooijen, A. ; Chanlo, C. ; den Dekker, A. ; Dijkhuis, J. ; Pramm, S. ; ten Dolle, H.K.J.

Author_Institution

Philips Semicond., Innovation Center RF, Nijmegen

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1 mm³) and low cost at acceptable performance. A power added efficiency (PAE) of 35% is demonstrated in the low band (870 MHz) for an output power of 32 dBm with the second harmonic (H2) below -40 dBm and third harmonic (H3) below -45 dBm

Keywords

BiCMOS integrated circuits; UHF power amplifiers; analogue circuits; cellular radio; high electron mobility transistors; radiofrequency integrated circuits; silicon; 870 MHz; BiCMOS RF power amplifier chip; GSM; RF circuits; Si; analog circuits; miniaturized quad-band front-end module; organic laminate substrate; pHEMT switch die; passive integration technologies; power devices; BiCMOS integrated circuits; GSM; Laminates; PHEMTs; Power amplifiers; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Silicon; Switches; BiCMOS; RF circuits; Silicon bipolar; analog circuits; passive integration; power devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311136

Filename

4100204