Title :
Breakdown characteristics of (AlXGa1-X)0.52In0.48P p-i-n diodes
Author :
David, J.P.R. ; Ghin, R. ; Plimmer, S.A. ; Hopkinson, M. ; Allam, J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
We have measured the breakdown voltage in a range of MBE grown bulk (AlXGa1-X)0.52In0.48P p-i-ns. Results indicate a linear increase of the breakdown voltage with Al composition similar to earlier measurements performed on AlX Ga1-XAs. Since no departure is observed during the transition from direct to indirect bandgap for both material systems, the breakdown voltage must depend on factors apart from just the bandgap energy. We ascribe the breakdown voltage to be dictated by an average energy calculated based on the corresponding density of states of the individual Γ, L and X conduction band valleys. This simple relation is able to describe both material systems concurrently suggesting that the breakdown mechanism is dependent upon the whole bandstructure. Impact ionisation measurements were also conducted on the Ga0.52In0.48P and Al0.52In0.48 P devices as well as temperature dependent breakdown measurements on the Ga0.52In0.48P p-i-n´s
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; electric breakdown; electronic density of states; energy gap; gallium compounds; impact ionisation; indium compounds; many-valley semiconductors; p-i-n diodes; (AlXGa1-X)0.52In0.48P p-i-n diode; (AlGa)0.52In0.48P; MBE; band structure; breakdown voltage; conduction band; density of states; direct bandgap; impact ionisation; indirect bandgap; Composite materials; Conducting materials; Electric breakdown; Energy measurement; Impact ionization; Performance evaluation; Photonic band gap; Temperature dependence; Temperature measurement; Voltage measurement;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616493
