Two-port filters and resonators on AlN/3C-SiC plates utilizing high-order Lamb wave modes

Author

Chih-Ming Lin ; Yung-Yu Chen ; Felmetsge, V.V. ; Senesky, Debbie G. ; Pisano, Albert P.

Author_Institution

Berkeley Sensor & Actuator Center, Univ. of California, Berkeley, Berkeley, CA, USA

fYear

2013

fDate

20-24 Jan. 2013

Firstpage

789

Lastpage

792

Abstract

A composite plate composed of aluminum nitride (AlN) and cubic silicon carbide (3C-SiC) is a promising mechanical structure that enables high-frequency Lamb wave devices since the 3C-SiC plate can effectively increase coupling of high-order Lamb wave modes and reduce steep phase velocity dispersion simultaneously. In this study, two-port filters and resonators utilizing various Lamb wave modes in the AlN/3C-SiC composite plate are microfabricated on 2.5-μm-thick AlN films deposited on various thicknesses of 3C-SiC layers. Intriguingly, the experimental results show that some Lamb wave modes are suitable for two-port resonator topology whereas some others are applicable for two-port filter topology due to different wave propagation characteristics.

Keywords

III-V semiconductors; aluminium compounds; composite materials; microfabrication; network topology; silicon compounds; surface acoustic wave resonator filters; thick film circuits; two-port networks; wide band gap semiconductors; AlN-SiC; composite plate; high-order Lamb wave mode; mechanical structure; microfabrication; size 2.5 mum; steep phase velocity dispersion reduction; thick film deposition; two-port filter; two-port resonator topology; wave propagation characteristics; Acoustic waves; Aluminum nitride; Films; Frequency measurement; Resonator filters; Silicon; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on

Conference_Location

Taipei

ISSN

1084-6999

Print_ISBN

978-1-4673-5654-1

Type

conf

DOI

10.1109/MEMSYS.2013.6474361

Filename

6474361