GaAs HBT ESD Diode Layout and its Relationship to Human Body Model Rating

Author

Teeter, Douglas A. ; Muhonen, Kathy ; Widay, David ; Fresina, Mike

Author_Institution

Billerica, Middlesex County, MA

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

Different GaAs HBT ESD diode configurations are analyzed and compared using human body model (HBM) and transmission line pulse (TLP) measurements. A common diode stack test circuit consisting of 3 series forward and reverse diodes is used to analyze ESD ruggedness dependence on layout and area. Both base emitter and base collector junction ESD ruggedness is compared and analyzed. To our knowledge, this is the first time data has been presented for GaAs HBT diodes that calculates the ratio of HBM voltage to maximum TLP current

Keywords

electrostatic discharge; gallium arsenide; heterojunction bipolar transistors; pulse measurement; semiconductor diodes; GaAs; HBT ESD diode layout; electrostatic discharges; emitter; heterojunction bipolar transistors; human body model rating; transmission line pulse measurements; Biological system modeling; Circuit testing; Diodes; Distributed parameter circuits; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Humans; Pulse measurements; Transmission line measurements; ESD; Electrostatic Discharges; HBT; TLP; heterojunction bipolar transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311139

Filename

4100207