Title :
GaAs HBT ESD Diode Layout and its Relationship to Human Body Model Rating
Author :
Teeter, Douglas A. ; Muhonen, Kathy ; Widay, David ; Fresina, Mike
Author_Institution :
Billerica, Middlesex County, MA
Abstract :
Different GaAs HBT ESD diode configurations are analyzed and compared using human body model (HBM) and transmission line pulse (TLP) measurements. A common diode stack test circuit consisting of 3 series forward and reverse diodes is used to analyze ESD ruggedness dependence on layout and area. Both base emitter and base collector junction ESD ruggedness is compared and analyzed. To our knowledge, this is the first time data has been presented for GaAs HBT diodes that calculates the ratio of HBM voltage to maximum TLP current
Keywords :
electrostatic discharge; gallium arsenide; heterojunction bipolar transistors; pulse measurement; semiconductor diodes; GaAs; HBT ESD diode layout; electrostatic discharges; emitter; heterojunction bipolar transistors; human body model rating; transmission line pulse measurements; Biological system modeling; Circuit testing; Diodes; Distributed parameter circuits; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Humans; Pulse measurements; Transmission line measurements; ESD; Electrostatic Discharges; HBT; TLP; heterojunction bipolar transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311139
