Title :
250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector
Author :
Chevalier, P. ; Raya, C. ; Geynet, B. ; Pourchon, F. ; Judong, F. ; Saguin, F. ; Schwartzmann, T. ; Pantel, R. ; Vandelle, B. ; Rubaldo, L. ; Avenier, G. ; Barbalat, B. ; Chantre, A.
Author_Institution :
STMicroelectron., Crolles
Abstract :
This paper presents investigations led to simplify the collector module of SiGeC HBTs in order to reduce technology cost. Outcome of this work is an HBT featuring an all-implanted collector with record fT and fmax (>250 GHz)
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; ion implantation; 250 GHz; BiCMOS integrated circuits technology; Si-SiGeC; all-implanted collector; heterojunction bipolar transistors; ion implantation; self-aligned HBT; BiCMOS integrated circuits; CMOS technology; Costs; Diffusion tensor imaging; Heterojunction bipolar transistors; Implants; Integrated circuit technology; Isolation technology; Semiconductor device modeling; Silicon carbide; BiCMOS integrated circuits technology; Heterojunction bipolar transistors; Ion implantation; Modeling; Silicon Germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311148
