• DocumentCode
    3498678
  • Title

    250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector

  • Author

    Chevalier, P. ; Raya, C. ; Geynet, B. ; Pourchon, F. ; Judong, F. ; Saguin, F. ; Schwartzmann, T. ; Pantel, R. ; Vandelle, B. ; Rubaldo, L. ; Avenier, G. ; Barbalat, B. ; Chantre, A.

  • Author_Institution
    STMicroelectron., Crolles
  • fYear
    2006
  • fDate
    8-10 Oct. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents investigations led to simplify the collector module of SiGeC HBTs in order to reduce technology cost. Outcome of this work is an HBT featuring an all-implanted collector with record fT and fmax (>250 GHz)
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; ion implantation; 250 GHz; BiCMOS integrated circuits technology; Si-SiGeC; all-implanted collector; heterojunction bipolar transistors; ion implantation; self-aligned HBT; BiCMOS integrated circuits; CMOS technology; Costs; Diffusion tensor imaging; Heterojunction bipolar transistors; Implants; Integrated circuit technology; Isolation technology; Semiconductor device modeling; Silicon carbide; BiCMOS integrated circuits technology; Heterojunction bipolar transistors; Ion implantation; Modeling; Silicon Germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2006
  • Conference_Location
    Maastricht
  • ISSN
    1088-9299
  • Print_ISBN
    1-4244-0458-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2006.311148
  • Filename
    4100216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3498678