Title :
Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors
Author :
Vanhoucke, T. ; Hurkx, G.A.M. ; Panko, D. ; Campos, R. ; Piontek, A. ; Palestri, P. ; Selmi, L.
Author_Institution :
Philips Res., Leuven
Abstract :
The authors study the mixed-mode stress regime for bipolar transistors. From Monte Carlo simulations it was found that high-energy avalanche generated holes dominate the degradation and the energy dependence of the hot carriers on the device degradation was experimentally investigated including the pinch-in effect
Keywords :
Ge-Si alloys; Monte Carlo methods; avalanche breakdown; bipolar transistors; hot carriers; semiconductor device breakdown; semiconductor device models; HBT; Monte Carlo simulations; SiGe; bipolar transistors; high-energy avalanche generated holes; hot carrier energy dependence; mixed-mode degradation; mixed-mode stress regime; pinch-in effect; reliability modeling; Bipolar transistors; Charge carrier processes; Degradation; Electron traps; Germanium silicon alloys; Hot carriers; Impact ionization; Silicon germanium; Stress; Temperature; Bipolar Transistor; Hot Carriers; Mixed-Mode stress; Reliability Modeling; SiGe HBT;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311150
