Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs

Author

Grens, Curtis M. ; Cressler, John D. ; Joseph, Alvin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

Factors contributing to the observed bias-dependent features in common-base (CB) DC instability characteristics are examined for advanced SiGe HBTs. Parameters relevant to CB instabilities are identified and extracted from data to yield improved physical insight, a straightforward estimation methodology, and simple comparison between samples

Keywords

Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; BiCMOS technology; DC instability; SiGe; advanced HBT; avalanche breakdown; bias-dependent features; bipolar transistors; common-base avalanche instability; electric variables measurement; estimation methodology; impact ionization; safe-operating-area; Circuit stability; Data mining; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Microelectronics; Silicon germanium; Stability analysis; USA Councils; Voltage; SiGe HBT BiCMOS technology; avalanche breakdown; bipolar transistors; electric variables measurement; impact ionization; safe-operating-area;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311151

Filename

4100219