Title :
Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs
Author :
Grens, Curtis M. ; Cressler, John D. ; Joseph, Alvin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
Factors contributing to the observed bias-dependent features in common-base (CB) DC instability characteristics are examined for advanced SiGe HBTs. Parameters relevant to CB instabilities are identified and extracted from data to yield improved physical insight, a straightforward estimation methodology, and simple comparison between samples
Keywords :
Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; BiCMOS technology; DC instability; SiGe; advanced HBT; avalanche breakdown; bias-dependent features; bipolar transistors; common-base avalanche instability; electric variables measurement; estimation methodology; impact ionization; safe-operating-area; Circuit stability; Data mining; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Microelectronics; Silicon germanium; Stability analysis; USA Councils; Voltage; SiGe HBT BiCMOS technology; avalanche breakdown; bipolar transistors; electric variables measurement; impact ionization; safe-operating-area;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311151
