Title :
Reduction of fluorine concentration in the submicron polycide process using dichlorosilane WSix
Author :
Hsu, S.L. ; Lei, M.D. ; Lee, C.K. ; Liu, L.M. ; Lin, M.S. ; Chang, C.Y. ; Adachi, J. ; Schmitz, J.S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
The fluorine concentration in the WSix and underlying gate oxide after anneal is substantially lower in the DCS-WSix process, when compared to that in the SiH4-WSix process. The reduced fluorine concentration from the DCS-WSix process results in little or no increase in the effective gate oxide thickness. The C1 concentration in DCS-WSix is about four orders of magnitude higher than that in SiH4-WSix films, but the C1 concentrations in the gate oxide are at the same level for both types of films.
Keywords :
CMOS integrated circuits; CVD coatings; annealing; chemical vapour deposition; metallisation; tungsten compounds; CVD film; SiH2Cl2-WF6; WF6; WSix; dichlorosilane reaction; effective gate oxide thickness; flow rate; reduced F concentration; submicron CMOS; submicron polycide process; Annealing; CMOS process; Distributed control; Fluctuations; Manufacturing; Semiconductor device manufacture; Semiconductor films; Silicides; Temperature; Tungsten;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263634
