Title :
Fluorinated CMOSFETs fabricated on (100) and (111) Si substrates
Author :
Balasinski, A. ; Vishnubhotla, L. ; Ma, T.P. ; Tseng, H.-H. ; Tobin, P.J.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
By introducing appropriate amounts of F into the gate SiO2, the transconductance and channel mobility for both n- and p-channel MOSFETs made on either (100) or (111) Si substrate are improved, due to the reduced densities of interface traps and oxide charge. These results, coupled with its improved reliability against hot-carrier damage, make fluorinated oxide an attractive VLSI technology.
Keywords :
CMOS integrated circuits; VLSI; carrier mobility; insulated gate field effect transistors; interface electron states; ion implantation; (100) substrate; (111) substrate; CMOSFET; LDD; Si substrates; SiO2:F; VLSI; channel mobility; effective mass effect; fluorinated oxide; gate SiO2; ion implantation; n-channel; p-channel; reduced densities of interface traps; reduced oxide charge; reliability against hot-carrier damage; transconductance; CMOSFETs; Charge measurement; Charge pumps; Current measurement; Effective mass; Hot carriers; MOSFET circuits; Microelectronics; Research and development; Transconductance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263635
