Unified Analysis of Degraded Base Current in SiGe:C HBTs after Reverse and Forward Reliability Stress

Author

Ruat, M. ; Revil, N. ; Pananakakis, G. ; Ghibaudo, G.

Author_Institution

STMicroelectronics, Crolles

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

A 150GHz f_T/f_max SiGe:C NPN heterojunction bipolar transistor was subjected to reverse reliability stress, high current forward stress and mixed-mode stress. A base current degradation comparison puts in evidence a Shockley-Read-Hall leakage mechanism for all the degradation modes, giving a unified basis for device degradation physics study. Temperature and recovery behavior, acceleration factors and defect location studies add to discussion on aging models in SiGe:C HBTs

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor device reliability; 150 GHz; BiCMOS technology; DC characteristics degradation; HBT; NPN heterojunction bipolar transistor; Shockley-Read-Hall leakage mechanism; SiGe:C; acceleration factors; defect location; degraded base current; device degradation physics; high current forward stress; mixed-mode stress; recovery behavior; reverse reliability stress; temperature effect; Aging; BiCMOS integrated circuits; Current density; Degradation; Heterojunction bipolar transistors; Monitoring; Physics; Space technology; Stress measurement; Temperature; BiCMOS technology; DC characteristics degradation; Heterojunction Bipolar Transistor; Reliability stress; Temperature effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311156

Filename

4100224