A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications

Author

Orner, B.A. ; Dahlstr, M. ; Pothiawala, A. ; Rassel, R.M. ; Liu, Q. ; Ding, H. ; Khater, M. ; Ahlgren, D. ; Joseph, A. ; Dunn, J.

Author_Institution

IBM Microelectron. Div., IBM, Essex Junction, VT

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

The paper presents a 0.13 mum SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (f_T = 300 GHz /f_max = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky and p-i-n diodes and other back end of line passives

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Schottky diodes; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave integrated circuits; p-i-n diodes; varactors; 0.13 micron; 300 GHz; 330 GHz; BiCMOS technology; HBT; SiGe; heterojunction bipolar transistors; line passives; millimeter wave bipolar integrated circuits; millimeter wave devices; silicon alloys; silicon bipolar process technology; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; P-i-n diodes; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave bipolar integrated circuits; Millimeter wave devices; Silicon Alloys; Silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311157

Filename

4100225