Title :
A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications
Author :
Orner, B.A. ; Dahlstr, M. ; Pothiawala, A. ; Rassel, R.M. ; Liu, Q. ; Ding, H. ; Khater, M. ; Ahlgren, D. ; Joseph, A. ; Dunn, J.
Author_Institution :
IBM Microelectron. Div., IBM, Essex Junction, VT
Abstract :
The paper presents a 0.13 mum SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (fT = 300 GHz /fmax = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky and p-i-n diodes and other back end of line passives
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Schottky diodes; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave integrated circuits; p-i-n diodes; varactors; 0.13 micron; 300 GHz; 330 GHz; BiCMOS technology; HBT; SiGe; heterojunction bipolar transistors; line passives; millimeter wave bipolar integrated circuits; millimeter wave devices; silicon alloys; silicon bipolar process technology; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; P-i-n diodes; Silicon germanium; Heterojunction bipolar transistors; Millimeter wave bipolar integrated circuits; Millimeter wave devices; Silicon Alloys; Silicon bipolar/BiCMOS process technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311157
