• DocumentCode
    3498900
  • Title

    High quality MOSFETs with N2O annealed thin TEOS gate oxide

  • Author

    Sun, S.C. ; Chang, H.Y. ; Chao, T.S. ; Lu, C.Y. ; Chang, S.W. ; Lee, K.Y. ; Lee, L.S.

  • Author_Institution
    Nat. Nano Device Lab., Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    1993
  • fDate
    1993
  • Firstpage
    109
  • Lastpage
    111
  • Abstract
    The authors present the electrical characteristics of MOSFETs utilizing thin (125 AA) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.
  • Keywords
    CMOS integrated circuits; VLSI; annealing; insulated gate field effect transistors; nitridation; CMOS; LOCOS isolation; MOSFET; N2O anneal; VLSI; drain current degradation; electrical characteristics; high quality gate oxide; hot carrier stress; submicron device fabrication; tetraethoxysilane; thin TEOS gate oxide; transconduction degradation; Annealing; CMOS technology; Chemical technology; Dielectric substrates; MOSFETs; Oxidation; Plasma chemistry; Plasma temperature; Thermal degradation; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
  • Conference_Location
    Taipei, Taiwan
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0978-2
  • Type

    conf

  • DOI
    10.1109/VTSA.1993.263638
  • Filename
    263638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3498900