Title :
High quality MOSFETs with N2O annealed thin TEOS gate oxide
Author :
Sun, S.C. ; Chang, H.Y. ; Chao, T.S. ; Lu, C.Y. ; Chang, S.W. ; Lee, K.Y. ; Lee, L.S.
Author_Institution :
Nat. Nano Device Lab., Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The authors present the electrical characteristics of MOSFETs utilizing thin (125 AA) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.
Keywords :
CMOS integrated circuits; VLSI; annealing; insulated gate field effect transistors; nitridation; CMOS; LOCOS isolation; MOSFET; N2O anneal; VLSI; drain current degradation; electrical characteristics; high quality gate oxide; hot carrier stress; submicron device fabrication; tetraethoxysilane; thin TEOS gate oxide; transconduction degradation; Annealing; CMOS technology; Chemical technology; Dielectric substrates; MOSFETs; Oxidation; Plasma chemistry; Plasma temperature; Thermal degradation; Thermal stresses;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263638
