Author :
Van Huylenbroeck, Stefaan ; Choi, L.J. ; Sibaja-Hernandez, A. ; Piontek, A. ; Linten, D. ; Dehan, M. ; Dupuis, O. ; Carchon, G. ; Vleugels, F. ; Kunnen, E. ; Leray, P. ; Devriendt, K. ; Shi, X.P. ; Loo, R. ; Hijzen, E. ; Decoutere, S.
Abstract :
A QSA airgap isolated HBT module, embedded in a 0.13mum BiCMOS technology, reaches fT/fmaxvalues of 205/275GHz and a 3.5ps CML gate-delay. A 17GHz LNA using high quality passives sustains above 8kV HBM ESD stress
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; millimetre wave bipolar transistors; millimetre wave integrated circuits; semiconductor technology; 0.13 micron; 17 GHz; 205 GHz; 275 GHz; BiCMOS integrated circuits; BiCMOS process technology; HBM ESD stress; LNA; SiGe:C; airgap isolated BiCMOS technology; airgap isolated HBT module; current mode logic; heterojunction bipolar transistors; low noise amplifier; on-chip high quality passives; quasi self-aligned architecture; BiCMOS integrated circuits; CMOS technology; Diffusion tensor imaging; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Parasitic capacitance; Radio frequency; Surfaces; Thermal resistance; BiCMOS integrated circuits; BiCMOS process technology; Current mode logic; Heterojunction bipolar transistors; Silicon Germanium;
