Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors

Integration of high voltage transistors and varactors with high tuning range into high frequency SiGe bipolar technologies is challenging due to the requirement of a shallow collector for the high speed transistor. This paper presents a high speed SiGe bipolar technology using a novel concept with two epitaxial layers for the simultaneous integration of high speed transistors, high voltage transistors, and varactors. Using this concept high speed transistors with 209 GHz cut-off frequency and 3.3 ps gate delay have been combined with high voltage transistors providing an emitter-collector breakdown voltage of 5 V. Additionally in this concept a varactor has been developed and optimized to achieve a high tuning range of 13 GHz and low phase noise for a 77 GHz VCO