Title :
Non-quasi-static effects in saturated bipolar circuits
Author :
Wu, B.S. ; Chuang, C.T. ; Lu, P.F.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A non-quasi-static (NQS) model accounting for intrinsic carrier propagation delays in both B/E and B/C junctions is implemented in the ASTAP circuit simulator to evaluate the impact of non-quasi-static effects in saturated bipolar circuits. It is shown that while the extra delay introduced by the NQS effects during the turn-on transition is primarily due to the normal mode B/E NQS time constant, the more severe NQS delay in the turn-off transition is caused mainly by the removal of the saturation over-drive charges and the longer inverse mode B/C NQS time constant.
Keywords :
bipolar integrated circuits; circuit analysis computing; delays; ASTAP circuit simulator; intrinsic carrier propagation delays; inverse mode time constant; nonquasistatic effects; normal mode time constant; saturated bipolar circuits; saturated invertor; saturation over-drive charges; turn-off transition; turn-on transition; Analog circuits; Capacitance; Circuit simulation; Delay effects; Digital circuits; Inverters; Monitoring; Propagation delay; Resistors; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263640
