Title :
RF, Analog and Mixed Signal Technologies for Communication ICs - An ITRS Perspective
Author :
Huang, W. Margaret ; Bennett, Herbert S. ; Costa, Julio ; Cottrell, Peter ; Immorlica, Anthony A., Jr. ; Mueller, Jan-Erik ; Racanelli, Marco ; Shichijo, Hisashi ; Weitzel, Charles E. ; Zhao, Bin
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ
Abstract :
The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon and III-V compound semiconductors. This paper discussed the roadmap and the figures of merit (FoM) used to characterize both active and passive devices critical for typical radio front end designs. The trends, challenges and potential solutions was reviewed and address the intersection of silicon and III-V compound semiconductors
Keywords :
III-V semiconductors; analogue integrated circuits; elemental semiconductors; mixed analogue-digital integrated circuits; radiocommunication; radiofrequency integrated circuits; semiconductor technology; III-V compound semiconductors; ITRS perspective; International Technology Roadmap for Semiconductor; RF technology; Radio Frequency and Analog/Mixed-Signal Wireless Technology Working Group; analog technology; communication integrated circuit; device technology; figures of merit; mixed signal technology; radio front end; silicon semiconductor; CMOS technology; Circuits; Communications technology; Costs; III-V semiconductor materials; RF signals; Radio frequency; Silicon; Wireless LAN; Wireless communication;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311160
