Title :
Two-dimensional DC and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer circuit
Author :
Kuo, J.B. ; Lu, T.C. ; Ma, S.Y.
Author_Institution :
Dept. of Electr. Eng., National Taiwan Univ., Taipei, Taiwan
Abstract :
The authors report DC and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer circuit using a modified PISCES program. As confirmed by published data, the modified PISCES program provides a good prediction on the fT for the SiGe-base heterojunction bipolar devices. Based on the PISCES results, the ECL buffer using the BJT devices with germanium only provides a less than 10% shorter fall time as compared to the case without it although the fT is 2* faster.
Keywords :
Ge-Si alloys; bipolar integrated circuits; buffer circuits; circuit analysis computing; emitter-coupled logic; heterojunction bipolar transistors; semiconductor device models; 2D DC analysis; BJT; ECL buffer circuit; SiGe base; heterojunction bipolar device; modified PISCES program; transient analysis; Analytical models; Circuit optimization; Circuit simulation; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Solid modeling; Transient analysis;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263641
