Transient simulation of EPROM writing characteristics with a novel hot electron injection model

Author

Huang, Chimoon ; Wang, Tahui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

fYear

1993

fDate

1993

Firstpage

124

Lastpage

127

Abstract

A two-dimensional transient simulation of the EPROM writing characteristics is presented. A Monte Carlo hot electron gate current model which accounts for Fowler-Nordheim tunneling and thermionic emission has been implemented in a general-purpose two-dimensional device simulator, PISCES IIB, as a post-processor. The simulation result is compared favorably with experimental data for channel lengths down to 0.5 mu m. The thermionic emission is found to be a dominant injection mechanism in simulated EPROM structures during the programming transient.

Keywords

CMOS integrated circuits; EPROM; Monte Carlo methods; VLSI; circuit analysis computing; hot carriers; integrated memory circuits; tunnelling; EPROM writing characteristics; Fowler-Nordheim tunneling; Monte Carlo hot electron gate current model; PISCES IIB; VLSI; general-purpose two-dimensional device simulator; programming transient; simulation tool; thermionic emission; two-dimensional transient simulation; EPROM; Electron emission; Hydrodynamics; Monte Carlo methods; Optical scattering; Predictive models; Secondary generated hot electron injection; Thermionic emission; Tunneling; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263642

Filename

263642