Title :
High-power 800-2000 nm wavelength broad-waveguide SCH-QW diode lasers
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
Summary form only given. BW (broad-waveguide) SCH-QW lasers utilizing a thick undoped waveguide region (0.8-1.3 /spl mu/m) exhibit very low internal loss. The devices have very high differential efficiencies and record-high output power levels. The overall effectiveness of BW-SCH-QW approach has been demonstrated in five different material systems (AlGaAs-GaAs, AlInGaAsP-GaAs, InGaAsP-GaAs, InGaAsP-InP, and AlInGaAsSb-GaSb), thereby providing a method for achieving high output power within a wavelength range suitable for most medical and industrial applications.
Keywords :
infrared sources; laser applications in medicine; laser beam applications; laser transitions; optical losses; quantum well lasers; waveguide lasers; 0.8 to 1.3 mum; AlGaAs-GaAs; AlInGaAsP-GaAs; AlInGaAsSb-GaSb; BW-SCH-QW approach; InGaAsP-GaAs; InGaAsP-InP; high differential efficiencies; high output power; high-power IR wavelength broad-waveguide SCH-QW diode lasers; industrial laser applications; material systems; medical laser applications; record-high output power levels; thick undoped waveguide region; very low internal loss; wavelength range; Apertures; Coatings; Diode lasers; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Optical waveguides; Power generation; Testing; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675794
