• DocumentCode
    3499080
  • Title

    Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz

  • Author

    Laskin, E. ; Nicolson, S.T. ; Chevalier, P. ; Chantre, A. ; Sautreuil, B. ; Voinigescu, S.P.

  • Author_Institution
    Edward S. Rogers Sr. Dept. of ECE, Toronto Univ., Ont.
  • fYear
    2006
  • fDate
    8-10 Oct. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Static 2:1 frequency dividers with different latch configurations were designed and fabricated in two SiGe HBT technologies. The self-oscillation and maximum operation frequency are found to be correlated with the fMAX but not with the fT of the technology. A self-oscillation frequency of 77 GHz, the highest among static dividers in SiGe HBT technology, is achieved with the lowest power consumption of 122 mW from 3.3 V supply. Phase noise measurements of the 100-GHz input and 50-GHz output signals indicate ideal behavior with no measurable noise contribution from the divider. All fabricated dividers feature an integrated single-ended-to-differential transformer for ease of testing, yet broadband 20 GHz-100 GHz operation is maintained
  • Keywords
    Ge-Si alloys; bipolar analogue integrated circuits; frequency dividers; low-power electronics; 122 mW; 20 to 100 GHz; 3.3 V; HBT technologies; SiGe; integrated single-ended-to-differential transformer; latch configurations; static dividers; static frequency divider; Energy consumption; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Testing; Topology; SiGe HBT; Static frequency dividers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2006
  • Conference_Location
    Maastricht
  • ISSN
    1088-9299
  • Print_ISBN
    1-4244-0458-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2006.311163
  • Filename
    4100231