Title :
A channel field model of SOI MOSFET
Author :
Wann, Hsing-jen ; Ko, Ping K. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The peak channel electric field Em of MOSFET is a monitor of the hot-carrier-induced device degradation. The quasi-two-dimensional model for bulk MOSFET predicts Em to be a function of device parameters including the drain junction depth Xj. In SOI MOSFET there is no clear definition of Xj. To use the silicon film thickness tSi for Xj in Em calculation for SOI MOSFET overestimates the hot-carrier currents. The authors present a model that includes the effect of the lateral doping gradient of the drain junction explicitly. The results agree with two dimensional device simulations.
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; 2D effect; SOI MOSFET; Si-SiO2; channel field model; deep submicron MOSFET LDD; drain junction; hot carriers; lateral doping gradient; Degradation; Dielectric constant; Dielectric substrates; Dielectrics and electrical insulation; Doping; Hot carriers; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263644
