Title :
Preparation and operation characteristics of nano-scale channel length vertical structure Zinc Oxide Thin Film Transistor
Author :
Yue Shan ; Dongxing Wang ; Yue Zhang ; Jiabin Chen ; Hao Zhang ; Jinghua Yin ; Hong Zhao
Author_Institution :
Dept. of Electron. Sci. & Technol., Harbin Univ. of Sci. & Technol., Harbin, China
Abstract :
At room temperature, using with substrate of quartz glass, ZnO as active layer, we designed and prepared Zinc Oxide Thin Film Transistor with the structure of Ag/ZnO/Al/ZnO/Ag. The device shows the advantage of large operation electric current, low operate voltage and high charge carriers mobility and so on. When the device works, the drain could achieve at 9.15 mA, the threshold voltage Vth is only about 1.35 V, while the gate voltage VGS is 0.2 V, VDS is 3 V. The channel length is at only nano-scale.
Keywords :
II-VI semiconductors; carrier mobility; low-power electronics; nanofabrication; nanostructured materials; semiconductor growth; thin film transistors; wide band gap semiconductors; zinc compounds; SiO2; ZnO; current 9.15 mA; high charge carrier mobility; large operation electric current; low operation voltage; nanoscale channel length vertical structure; quartz glass; voltage 0.2 V; voltage 3 V; zinc oxide thin film transistor; Artificial intelligence; Equations; Logic gates; Magnetic films; Mathematical model; Transistors; Zinc oxide; RF Magnetron Sputtering; ZnO-TFT; carriers mobility;
Conference_Titel :
Measurement, Information and Control (ICMIC), 2013 International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-1390-9
DOI :
10.1109/MIC.2013.6757945
