Title :
Experimental Study of Metallic Emitter SiGeC HBTs
Author :
Barbalat, B. ; Judong, F. ; Rubaldo, L. ; Chevalier, P. ; Proust, M. ; Richard, Cedric ; Borot, G. ; Vandelle, B. ; Saguin, F. ; Dutartre, D. ; Zerounian, N. ; Aniel, F. ; Chantre, Alain
Abstract :
This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20 K on As-doped mono-emitter layers are also reported, which help understand the physics of hole injection in highly doped emitters. The optimization of the process is detailed, and a significant increase of the fT times BVCEO product in metallic emitter SiGe HBTs is finally demonstrated
Keywords :
BiCMOS integrated circuits; Hall effect; germanium compounds; heterojunction bipolar transistors; silicon compounds; BiCMOS; HBT; Hall effect; SiGeC; high speed; hole diffusion; metallic emitter; BiCMOS integrated circuits; Doping profiles; Fabrication; Germanium silicon alloys; Hall effect; Heterojunction bipolar transistors; Physics; Silicidation; Silicon germanium; Variable speed drives; BiCMOS; HBT; Hall effect; SiGeC; high-speed; hole diffusion; metallic emitter;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311166
