Title :
High Performances 3D Damascene MIM Capacitors Integrated in Copper Back-End Technologies
Author :
Cremer, S. ; Richard, C. ; Benoit, D. ; Besset, C. ; Manceau, J.P. ; Farcy, A. ; Perrot, C. ; Segura, N. ; Marin, M. ; Bècu, S. ; Boret, S. ; Thomas, M. ; Guillaumet, S. ; Bonnard, A. ; Delpech, P. ; Bruyere, S.
Author_Institution :
ST Microelectron., Crolles, France
Abstract :
RF and analog designs require high performances MIM capacitors. In order to continue downscaling of MIM devices, we have developed and integrated a 3D damascene MIM capacitor in the copper back-end of a 0.13 mum BICMOS technology. Si3N4 has been used as dielectric to reach excellent performances for a 5 fF/mum2 capacitance density in term of leakage current, voltage linearity, dielectric relaxation, and reliability. This 3D architecture is a very promising candidate to carry on capacitance density increase.
Keywords :
BiCMOS integrated circuits; capacitors; copper; dielectric materials; integrated circuit reliability; leakage currents; 3D damascene MIM capacitors; BICMOS technology; copper back end technologies; dielectric materials; high performances; leakage currents; reliability; BiCMOS integrated circuits; Capacitance; Copper; Dielectrics; Leakage current; Linearity; MIM capacitors; MIM devices; Radio frequency; Voltage; Dielectric material; Leakage currents; MIM Devices; Reliability;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311168
