A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures

Author

Krithivasan, Ramkumar ; Lu, Yuan ; Najafizadeh, Laleh ; Zhu, Chendong ; Cressler, John D. ; Chen, Suheng ; Ulaganathan, Chandradevi ; Blalock, Benjamin J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

We investigate, for the first time, the design and implementation of a high-slew rate op-amp in SiGe BiCMOS technology capable of operation across very wide temperature ranges, and down to deep cryogenic temperatures. We achieve the first monolithic op-amp (for any material system) capable of operating reliably down to 4.3 K. Two variants of the SiGe BiCMOS op-amp were implemented using alternative biasing schemes, and the effects of temperature on these biasing schemes, and their impact on the overall op-amp performance, is investigated

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cryogenic electronics; operational amplifiers; BiCMOS; deep cryogenic temperatures; high slew rate; operational amplifier; BiCMOS integrated circuits; Cryogenics; Germanium silicon alloys; Materials reliability; Moon; Operational amplifiers; Silicon germanium; Temperature distribution; Temperature sensors; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311170

Filename

4100238