DocumentCode :
3499239
Title :
A conductive channel size comparison of silicon dielectric and amorphous silicon antifuses
Author :
Chen, Kueing-Long
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1993
fDate :
1993
Firstpage :
165
Lastpage :
167
Abstract :
The physical size of an antifuse conductive channel is determined through the electrical characterization by using sidewall antifuse structures. The relationship of a programmed ´ON´ antifuse conductive channel size as a function of the programming current is established for both metal-metal amorphous silicon antifuses and poly-poly nitride/oxide antifuses. The result shows that the metal amorphous silicon antifuse requires at least 6 times higher programming current than the silicon dielectric antifuse to reach the same conductive channel size with 2000 AA diameter. The programming current ratio for these two types of antifuses increases with increasing antifuse conductive channel size.
Keywords :
amorphous semiconductors; elemental semiconductors; integrated circuit technology; logic arrays; metallisation; silicon; Si-Si3N4-SiO2; amorphous elemental semiconductor; antifuse conductive channel; conductive channel size comparison; dielectric antifuse; field programmable gate array; poly-poly nitride/oxide antifuses; programming current; sidewall antifuse structures; Amorphous silicon; Conductivity measurement; Current measurement; Dielectrics; Electrical resistance measurement; Functional programming; Instruments; Kelvin; Layout; Logic arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-0978-2
Type :
conf
DOI :
10.1109/VTSA.1993.263651
Filename :
263651
Link To Document :
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