A y-parameter approach to the design of one-port negative resistance oscillators

Author

Ji-Tao Zhang

Author_Institution

Higher Educ. Key Lab. for Meas. & Control Technol. & Instrumentations of Heilongjiang Province, Haerbin Univ. of Sci. & Technol., Harbin, China

Volume

01

fYear

2013

fDate

16-18 Aug. 2013

Firstpage

214

Lastpage

217

Abstract

The theory and design of a GaAs MESFET oscillator are presented. The oscillator is designed by the technique which utilizes readily available device and circuit Y parameters to predict oscillation conditions, stability, and noise performance. The simulation result shows that the oscillation frequency is 6.58 GHz with 11.392 dBm output power. The phase noise is -98.7 dBc at 100 kHz offset.

Keywords

III-V semiconductors; MESFET circuits; circuit noise; gallium arsenide; negative resistance circuits; oscillators; phase noise; Y-parameter approach; device stability; frequency 6.58 GHz; gallium arsenide MESFET oscillator; noise performance; one-port negative resistance oscillator design; oscillation condition; oscillation frequency; phase noise; Heterojunction bipolar transistors; MMICs; Noise; Oscillators; Performance evaluation; Radio frequency; Resistance; MESFET; Y parameters; oscillator; phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Measurement, Information and Control (ICMIC), 2013 International Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-1390-9

Type

conf

DOI

10.1109/MIC.2013.6757950

Filename

6757950