Title :
A y-parameter approach to the design of one-port negative resistance oscillators
Author_Institution :
Higher Educ. Key Lab. for Meas. & Control Technol. & Instrumentations of Heilongjiang Province, Haerbin Univ. of Sci. & Technol., Harbin, China
Abstract :
The theory and design of a GaAs MESFET oscillator are presented. The oscillator is designed by the technique which utilizes readily available device and circuit Y parameters to predict oscillation conditions, stability, and noise performance. The simulation result shows that the oscillation frequency is 6.58 GHz with 11.392 dBm output power. The phase noise is -98.7 dBc at 100 kHz offset.
Keywords :
III-V semiconductors; MESFET circuits; circuit noise; gallium arsenide; negative resistance circuits; oscillators; phase noise; Y-parameter approach; device stability; frequency 6.58 GHz; gallium arsenide MESFET oscillator; noise performance; one-port negative resistance oscillator design; oscillation condition; oscillation frequency; phase noise; Heterojunction bipolar transistors; MMICs; Noise; Oscillators; Performance evaluation; Radio frequency; Resistance; MESFET; Y parameters; oscillator; phase noise;
Conference_Titel :
Measurement, Information and Control (ICMIC), 2013 International Conference on
Conference_Location :
Harbin
Print_ISBN :
978-1-4799-1390-9
DOI :
10.1109/MIC.2013.6757950
