A new surface counter doped LDD (SCD-LDD) structure for deep submicron (0.35 mu m) MOSFETs

Author

Chou, J.W. ; Chang, C.Y. ; Ko, Joe

Author_Institution

Nat. Nano Device Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

1993

fDate

1993

Firstpage

178

Lastpage

181

Abstract

With the technique of oblique rotating implantation, the large-angle-tilt (LAT) LDD implant was followed by a low energy and large angle tilt BF₂ surface counter dope (named as SCD) implant which reduces the surface concentration of LDD region and results in a very light n^- layer on top of the n^- drain layer where the lateral electric fields and impact ionization rates are significantly suppressed. Consequently, a 0.35 mu m of effective channel length MOSFET was fabricated which revealed a superior and reliability over LATIDs. The hot carrier reliability is increased in this SCD-LDD structure as compared with controlled LATID´s.

Keywords

CMOS integrated circuits; VLSI; doping profiles; hot carriers; insulated gate field effect transistors; ion implantation; 0.35 micron; 2D doping contours; Si:P, BF₂; ULSI; deep submicron MOSFET; hot carrier reliability; impact ionization rates; ion implantation; large-angle-tilt; low energy; oblique rotating implantation; suppressed lateral electric fields; surface counter doped LDD; twin-well CMOS; CMOS technology; Counting circuits; Doping; Fabrication; Hot carriers; Impact ionization; Implants; Industrial electronics; Laboratories; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263654

Filename

263654