Title :
Ruggedness Improvement by Protection
Author :
van Bezooijen, A. ; de Graauw, Anton ; Ruijs, Lennart ; Pramm, Skule ; Chanlo, Christophe ; ten Dolle, H.J. ; van Straten, F. ; Mahmoudi, Reza ; Van Roermund, Arthur H M
Author_Institution :
Philips Semicond., Nijmegen
Abstract :
Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm
Keywords :
adaptive control; avalanche breakdown; overvoltage protection; power amplifiers; voltage regulators; 2 W; 5 V; adaptive control; avalanche breakdown; cellular phone; over-voltage protection; power amplifier transistors; ruggedness improvement; Breakdown voltage; Circuits; Detectors; Packaging; Power amplifiers; Power generation; Power transistors; Protection; Temperature; Threshold voltage; Adaptive control; avalanche breakdown; over-voltage protection; power amplifiers; temperature;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311174
