DocumentCode :
3499391
Title :
Modeling of Intrinsic Base Majority Carrier Thermal Noise for SiGe HBTs Including Fringe BE Junction Effect
Author :
Xia, Kejun ; Niu, Guofu
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL
fYear :
2006
fDate :
8-10 Oct. 2006
Firstpage :
1
Lastpage :
4
Abstract :
This paper investigates the impact of fringe BE junction on base majority carrier RF noise in SiGe HBTs. Due to fringe effect, the base hole noise should be modeled by correlated noise voltage source and noise current source in hybrid representation. The noise voltage source can be modeled by a weakly bias dependent noise resistance that is different from the intrinsic base resistance. The correlation between the two noise sources is important for biases around peak fT
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; thermal noise; HBT; RF noise; SiGe; fringe BE junction effect; majority carrier thermal noise; Background noise; Circuit noise; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Resistors; Silicon germanium; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
ISSN :
1088-9299
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2006.311176
Filename :
4100244
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3499391
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