DocumentCode :
3499484
Title :
High RF performances asymmetric spacer NLDMOS integration in a 0.25μm SiGe:C BiCMOS Technology
Author :
Szelag, Bertrand ; Muller, Dorothée ; Mourier, Jocelyne ; Arnaud, C. ; Bilgen, Halim ; Judong, Fabienne ; Giry, Alexandre ; Pache, Denis ; Monroy, Agustin
Author_Institution :
Centre Commun de Microelectronique de Crolles, STMicroelectronics, Crolles
fYear :
2006
fDate :
8-10 Oct. 2006
Firstpage :
1
Lastpage :
4
Abstract :
An asymmetrical spacer LDMOSFET integrated in a 0.25μm BiCMOS technology is presented. Improved RF performances are obtained with this new architecture: fT close to 35GHz with BVds larger than 15V. Process integration strategy is discussed. Impact on the other devices is described.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MOSFET; carbon; millimetre wave integrated circuits; 0.25 micron; LDMOSFET; NLDMOS integration; SiGe:C; SiGe:C BiCMOS technology; asymmetric spacer; process integration strategy; BiCMOS integrated circuits; FETs; Low voltage; MOSFETs; Parasitic capacitance; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Space technology; Power Amplifier; Power MOSFETs; RF optimization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
ISSN :
1088-9299
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2006.311114
Filename :
4100249
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3499484
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