• DocumentCode
    3499499
  • Title

    Optimization of doping process on P-type wafer using spin-on technique

  • Author

    Lim, C.S. ; Kuan, S.H. ; Ibrahim, K.

  • Author_Institution
    Intel Technol. Sdn. Bhd., Penang, Malaysia
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    280
  • Lastpage
    283
  • Abstract
    Measurement of junction depth (Xj) value with respect to change in spin time, dopant volume and spin velocity during spin-on-doping process was obtained using groove and stain method. Theoretically, junction depth depends only on temperature and diffusion time. However, the result of this project indicate that spin time, spin velocity and dopant volume will also affect the value of junction depth
  • Keywords
    diffusion; semiconductor doping; diffusion; groove method; junction depth; optimization; p-type wafer; spin-on doping; stain method; Doping; Glass; Hafnium; Iron; Nitrogen; P-n junctions; Physics; Pollution measurement; Silicon; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616498
  • Filename
    616498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3499499