Optimization of doping process on P-type wafer using spin-on technique

Measurement of junction depth (X_j) value with respect to change in spin time, dopant volume and spin velocity during spin-on-doping process was obtained using groove and stain method. Theoretically, junction depth depends only on temperature and diffusion time. However, the result of this project indicate that spin time, spin velocity and dopant volume will also affect the value of junction depth