A 248–262 GHz InP HBT VCO with Interesting Tuning Behavior

Author

Jongwon Yun ; Namhyung Kim ; Daekeun Yoon ; Hyunchul Kim ; Sanggeun Jeon ; Jae-Sung Rieh

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

24

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

560

Lastpage

562

Abstract

A fundamental-mode common-base voltage-controlled oscillator (VCO) based on 250-nm InP heterojunction bipolar transistor (HBT) technology is reported. The VCO, which employs varactors implemented by connecting the base and emitter of npn transistors as tuning components, shows a tuning range of 247.8-262.2 GHz. The output power is greater than 0 dBm over the entire tuning range, and dissipated dc power is around 85 mW. An unexpected tuning behavior was observed, which was shown to arise from the internal parasitic base inductance of the transistors used for varactors in this work.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; varactors; voltage-controlled oscillators; InP; InP HBT VCO; dissipated dc power; frequency 247.8 GHz to 262.2 GHz; fundamental-mode common-base voltage-controlled oscillator; heterojunction bipolar transistor; interesting tuning behavior; internal parasitic base inductance; npn transistors; size 250 nm; tuning components; varactors; Heterojunction bipolar transistors; Inductance; Power generation; Tuning; Varactors; Voltage-controlled oscillators; Frequency control; heterojunction bipolar transistors (HBT); voltage-controlled oscillators (VCO);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2324753

Filename

6824863