Title :
High-speed, low-voltage design for high-performance static RAMs
Author_Institution :
Hitachi America, Ltd., Res. & Dev. Div., Terrytown, NY, USA
Abstract :
High-speed, low-voltage design is key to attaining high-performance static RAMs. This paper describes high-density memory cell designs and high-speed, low-voltage circuit designs for CMOS and BiCMOS (ECL CMOS) static RAMs.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; SRAM chips; emitter-coupled logic; BiCMOS static RAM; CMOS static RAM; ECL CMOS; high speed design; high-density memory cell designs; low-voltage circuit designs; BiCMOS integrated circuits; CMOS memory circuits; CMOS technology; Circuit synthesis; Laboratories; Power supplies; Random access memory; Read-write memory; Research and development; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263665
