A Modular 0.18 um Analog / RFCMOS Technology Comprising 32 GHz FT RF-LDMOS and 40V Complementary MOSFET Devices

Author

Lee, Zachary ; Zwingman, Robert ; Zheng, Jie ; Cai, Will ; Hurwitz, Paul ; Racanelli, Marco

Author_Institution

Jazz Semicond., Inc., Newport Beach, CA

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

High-performance RF-LDMOS, medium voltage (8-12V), and high voltage (20-40V) NLDMOS and PLDMOS devices, integrated in a modular 0.18 mum analog CMOS/RFCMOS technology platform, are described. Device design, process integration, manufacturability, and reliability issues are discussed. These devices are among the highest performance in their class. The successful integration of these devices has enabled us to address our roadmap in the growing wireless, analog, mixed-signal, and power management markets

Keywords

CMOS analogue integrated circuits; MOSFET; millimetre wave field effect transistors; 0.18 micron; 20 to 40 V; 32 GHz; 40 V; 8 to 12 V; NLDMOS devices; PLDMOS devices; RF-LDMOS; RFCMOS technology; analog CMOS technology; complementary MOSFET devices; CMOS technology; Driver circuits; Energy management; MOSFET circuits; Medium voltage; Power amplifiers; Process design; Resistors; Silicon; USA Councils; CMOS analog integrated circuits; LDMOS; Silicon RF-LDMOS technology; power devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311116

Filename

4100251