Title :
SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics
Author :
Najafizadeh, Laleh ; Zhu, Chendong ; Krithivasan, Ramkumar ; Cressler, John D. ; Cui, Yan ; Niu, Guofu ; Chen, Suheng ; Ulaganathan, Chandradevi ; Blalock, Benjamin J. ; Joseph, Alvin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
We present the first investigation of the optimal implementation of SiGe BiCMOS precision voltage references for extreme temperature range applications (+120 degC to -180 degC and below). We have developed and fabricated two unique Ge profiles optimized specifically for cryogenic operation, and for the first time compare the impact of Ge profile shape on precision voltage reference performance down to -180 degC. Our best case reference achieves a 28.1 ppm/ degC temperature coefficient over +27 degC to -180 degC, more than adequate for the intended lunar electronics applications
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; cryogenic electronics; reference circuits; 27 to -180 C; Ge profiles; SiGe; SiGe BiCMOS; cryogenic operation; extreme temperature range electronics; precision voltage references; BiCMOS integrated circuits; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Moon; Robustness; Silicon germanium; Temperature distribution; USA Councils; Voltage; SiGe HBT; analog circuits; cryogenic temperature; device physics; voltage reference;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311117
