DocumentCode
3499585
Title
BJT Base and Emitter Resistance Extraction from DC Data
Author
McAndrew, Colin C.
Author_Institution
Freescale Semicond., Tempe, AZ
fYear
2006
fDate
8-10 Oct. 2006
Firstpage
1
Lastpage
4
Abstract
This paper presents a new technique to determine the base and emitter resistances of BJTs. The method is based on analysis of intrinsic and extrinsic conductances, which can be calculated from forward Gummel DC data at different Vcb, and explicitly accounts for the difference between DC and AC values of base resistance
Keywords
bipolar transistors; electric resistance measurement; BJT base resistance extraction; BJT emitter resistance extraction; Gummel DC data; extrinsic conductances; intrinsic conductances; Bipolar transistors; Capacitance; Circuits; Current measurement; Data mining; Electrical resistance measurement; Frequency; Gain measurement; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location
Maastricht
ISSN
1088-9299
Print_ISBN
1-4244-0458-4
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2006.311120
Filename
4100255
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