DocumentCode :
3499585
Title :
BJT Base and Emitter Resistance Extraction from DC Data
Author :
McAndrew, Colin C.
Author_Institution :
Freescale Semicond., Tempe, AZ
fYear :
2006
fDate :
8-10 Oct. 2006
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a new technique to determine the base and emitter resistances of BJTs. The method is based on analysis of intrinsic and extrinsic conductances, which can be calculated from forward Gummel DC data at different Vcb, and explicitly accounts for the difference between DC and AC values of base resistance
Keywords :
bipolar transistors; electric resistance measurement; BJT base resistance extraction; BJT emitter resistance extraction; Gummel DC data; extrinsic conductances; intrinsic conductances; Bipolar transistors; Capacitance; Circuits; Current measurement; Data mining; Electrical resistance measurement; Frequency; Gain measurement; Virtual colonoscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
ISSN :
1088-9299
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2006.311120
Filename :
4100255
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3499585
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